Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu

Title
Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
Author(s)
김수현엄태광강대환[강대환]김훈[김훈]
Keywords
RUTHENIUM THIN-FILMS; ISOPROPYLMETHYLBENZENE-CYCLOHEXADIENE-RUTHENIUM; NITRIDE FILMS; RU; ELECTRODEPOSITION; INTERCONNECTS; METALLIZATION; PERFORMANCE; IMPROVEMENT
Issue Date
201110
Publisher
ELECTROCHEMICAL SOC INC
Citation
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.158, no.11, pp.D657 - D663
Abstract
Ruthenium (Ru)-based ternary thin films, RuSiN, were prepared by plasma enhanced atomic layer deposition (PEALD) by repeating the super-cycles consisting of Ru and SiN(x) PEALD sub-cycles at 270 degrees C and were evaluated as diffusion barriers for the direct plating of Cu interconnects. The intermixing ratios of Ru and SiN(x) in RuSiN films were controlled by changing the number of unit cycles in a SiN(x) sub-cycle from 1 to 9, whereas the number of unit cycles allocated for the Ru sub-cycle was fixed to 10 cycles. Secondary ion mass spectrometry showed that Si and N content in the film increased but the Ru content decreased with increasing number of SiN(x) unit cycles. The incorporated Si and N mostly formed Si(3)N(4) according to X-ray photoelectron spectroscopy. The amount of SiN(x) in the RuSiN film had a considerable effect on the properties of RuSiN films. X-ray diffraction showed that the crystallinity of the Ru film was degraded and the grains sizes decreased by incorporating SiN(x) into Ru by adding cyclic SiN(x) cycles. From transmission electron microscopy, it was revealed that the RuSiN film consisted of a SiN(x) amorphous matrix with very fine grains of Ru, similar to 3 nm in diameter, embedded in it. The SiN(x) amorphous region increased with increasing number of SiN(x) unit cycles, even though its resistivity increased. The sheet resistance and X-ray diffraction showed that the structure of Cu (100 nm)/PEALD-RuSiN (8 nm)/Si was stable until after annealing at 650 degrees C for 30 minutes, whereas that of Cu/PEALD-Ru (8 nm)/Si was stable until only 500 degrees C. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.054111jes] All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/24423http://dx.doi.org/10.1149/2.054111jes
ISSN
0013-4651
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공과대학 > 신소재공학부 > Articles
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