Dependence of Cu(In,Ga)Se2 Solar Cell Performance on Cd Solution Treatment Conditions

Title
Dependence of Cu(In,Ga)Se2 Solar Cell Performance on Cd Solution Treatment Conditions
Author(s)
전찬욱박상욱[박상욱]박순용[박순용]이은우[이은우]정우진[정우진]정용덕[정용덕]박래만[박래만]김제하[김제하]
Keywords
THIN-FILMS
Issue Date
201110
Publisher
TAYLOR & FRANCIS LTD
Citation
MOLECULAR CRYSTALS AND LIQUID CRYSTALS, v.551, pp.221 - 227
Abstract
In the current study, chemical bath deposition (CBD) was used to grow CdS thin films on a Cu(In,Ga)Se2 (CIGS) absorption layer, in order to examine the effects of CdS deposition conditions on the properties of CIGS solar cell devices. The dip time leading up to the start of CdS synthesis is thought to be an important process variable determining the concentration of Cd ions diffused into the CIGS as well as the condition of the CIGS surface. Accordingly, the behavior of the CIGS solar cell efficiency variation was observed while different dip times were applied, at 4, 15 and 30 minutes, respectively. When the dip time was extended, the series resistance (Rs) of the device fell by a substantial margin, leading to improved photoelectric conversion efficiency and enhanced uniformity in device properties. This can be attributed to the effect of CIGS surface cleaning by the NH4OH contained in the reaction solution.
URI
http://hdl.handle.net/YU.REPOSITORY/24401http://dx.doi.org/10.1080/15421406.2011.600659
ISSN
1542-1406
Appears in Collections:
공과대학 > 화학공학부 > Articles
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