Selenization of Cu-In-Ga Metal Precursor Using DESe(Diethyl Selenide)

Title
Selenization of Cu-In-Ga Metal Precursor Using DESe(Diethyl Selenide)
Author(s)
전찬욱서진우[서진우]이상환[이상환]박순용[박순용]이은우[이은우]김우남[김우남]고정익[고정익]도진영[도진영]박완우[박완우]
Keywords
ALLOY-FILMS; THIN-FILMS; DIETHYLSELENIDE; CUINSE2
Issue Date
201110
Publisher
TAYLOR & FRANCIS LTD
Citation
MOLECULAR CRYSTALS AND LIQUID CRYSTALS, v.551, pp.249 - 256
Abstract
In this study, Cu(In,Ga)Se-2 thin films were prepared using a Cu-In-Ga metallic precursor and diethylselenide (DESe) vapor. The Cu/(In+Ga) ratio of the precursor was adjusted by modulating the power impressed on the CuGa target. The Cu/(In+Ga) ratio was varied from 0.45 to 1.02, and the prepared precursors were selenized in a 500 degrees C quartz furnace using DESe. The results showed that the preferred crystal phase and the uniformity of the thin film differed according to the composition of the precursor. After selenization, changes in grain size stemming from Cu composition were observed, and the occurrence of a binary phase was verified through KCN etching. Shifts in the Cu-11(InGa)(9) peak and the separation of CIS and CGS peaks relative to increased Ga content were also observed.
URI
http://hdl.handle.net/YU.REPOSITORY/24395http://dx.doi.org/10.1080/15421406.2011.601169
ISSN
1542-1406
Appears in Collections:
공과대학 > 화학공학부 > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE