Atomic Layer Deposition of Co Using N-2/H-2 Plasma as a Reactant

Title
Atomic Layer Deposition of Co Using N-2/H-2 Plasma as a Reactant
Author(s)
김수현윤재홍[윤재홍]이한보람[이한보람]김도영[김도영]천태훈김형준[김형준]
Keywords
MEDIATED EPITAXY; THIN-FILMS; COSI2; SUBSTRATE; METAL
Issue Date
201110
Publisher
ELECTROCHEMICAL SOC INC
Citation
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.158, no.11, pp.H1179 - H1182
Abstract
Cobalt thin films were deposited by plasma-enhanced atomic layer deposition (PE-ALD) using CoCp2 as a precursor and N-2/H-2 plasma as a reactant. We systematically investigated the changes in Co film properties depending on N-2/H-2 gas flow ratio to study the role of N during PE-ALD Co. With increasing N-2 flow ratio, the resistivity decreased reaching minimum value at fN(2)/H-2 = 0.25 similar to 0.33, which corresponds to the atomic ratio in NH3 molecule, and then increased. With only N-2 or H-2 plasma, films with very high sheet resistance over 1 M/sq were deposited. The chemical compositions of Co films were analyzed by x-ray photoelectron spectroscopy (XPS) and thickness and conformality were determined by x-ray reflectometry (XRR) and field emission scanning electron microscopy (FE-SEM), respectively. Then, the silicidation of PE-ALD Co films producing epitaxial CoSi2 were investigated by x-ray diffraction (XRD) and high-resolution cross-sectional transmission electron microscopy (HR-XTEM). (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.077111jes] All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/24383http://dx.doi.org/10.1149/2.077111jes
ISSN
0013-4651
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공과대학 > 신소재공학부 > Articles
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