Excited-state Transitions of Self-assembled InAs/InAlGaAs Quantum Dots

Title
Excited-state Transitions of Self-assembled InAs/InAlGaAs Quantum Dots
Author(s)
김종수Kwanjae Lee[Kwanjae Lee]Byounggu Jo[Byounggu Jo]Cheul-Ro Lee[Cheul-Ro Lee]Jin Soo Kim[Jin Soo Kim]Sam Kyu Noh[Sam Kyu Noh]Jae-Young Leem[Jae-Young Leem]
Keywords
PHOTOLUMINESCENCE; INP; WAVELENGTH; INALGAAS; GROWTH; LAYER
Issue Date
201112
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.59, no.6, pp.3391 - 3395
Abstract
We report the structural and optical properties of self-assembled (SA) InAs/InAlGaAs quantum dots (QDs) grown on InP substrates by using molecular-beam epitaxy. When the amount of the arsenic supply and the deposition time were varied, the shape of the SA InAs/InAlGaAs QDs was modified to a relatively round shape, and the QD height was increased from 1.07 to 2.89 am. From the power and temperature dependences of the PL spectra, the excited-state transitions were confirmed from SA In As QDs with a material system of InAlGaAs-InP. This is the first observation of clear excited-state transitions for SA InAs/InAlGaAs QDs on InP.
URI
http://hdl.handle.net/YU.REPOSITORY/24168http://dx.doi.org/10.3938/jkps.59.3391
ISSN
0374-4884
Appears in Collections:
이과대학 > 물리학과 > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE