Cu(InGa)Se(2) thin film photovoltaic absorber formation by rapid thermal annealing of binary stacked precursors

Title
Cu(InGa)Se(2) thin film photovoltaic absorber formation by rapid thermal annealing of binary stacked precursors
Author(s)
구자석[구자석]김성철[김성철]박현욱[박현욱]김우경
Keywords
X-RAY-DIFFRACTION; REACTION-KINETICS; SELENIZATION KINETICS; IN PRECURSOR
Issue Date
201112
Publisher
ELSEVIER SCIENCE SA
Citation
THIN SOLID FILMS, v.520, no.5, pp.1484 - 1488
Abstract
Phase evolution during the synthesis of Cu(InGa)Se(2) from glass/Mo/(In(1-x)Ga(x))(2)Se(3)/CuSe bilayer precursors were investigated by in-situ high-temperature X-ray diffraction. With Se overpressure, CuSe was transformed to CuSe(2) at 220 degrees C. The CuSe(2) phase returned to CuSe by releasing Se at its peritectic point of 330 degrees C, where the formation of Cu(InGa)Se(2) phase was initiated as well. Rapid thermal processing of bilayer precursors showed the potential of fast formation of Cu(InGa)Se(2) within 2-5 min reaction with fairly uniform Ga and In depth profile. Further annealing with Se overpressure caused the formation of MoSe(2) at the interface of Mo and Cu(InGa)Se(2). (C) 2011 Published by Elsevier B.V.
URI
http://hdl.handle.net/YU.REPOSITORY/24154http://dx.doi.org/10.1016/j.tsf.2011.08.052
ISSN
0040-6090
Appears in Collections:
공과대학 > 화학공학부 > Articles
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