Investigation of ZnO/CdS/CuInxGa1-xSe2 interface reaction by using hot-stage TEM

Title
Investigation of ZnO/CdS/CuInxGa1-xSe2 interface reaction by using hot-stage TEM
Author(s)
전찬욱박순용[박순용]이은우[이은우]이상환[이상환]김우경이성호[이성호]이완규[이완규]이병주[이병주]배희경[배희경]유정호[유정호]
Keywords
CU(IN,GA)SE-2 THIN-FILMS; SOLAR-CELLS; STABILITY
Issue Date
201008
Publisher
ELSEVIER SCIENCE BV
Citation
CURRENT APPLIED PHYSICS, v.10, no.3, pp.S399 - S401
Abstract
A section of complete solar cell device consisting of Ag/Al:ZnO/i-ZnO/Cu( In, Ga)Se-2/Mo/glass was in situ annealed inside of TEM column and the interfacial variation was directly investigated in real-time. A pore structure was formed in CdS layer adjacent to CIGS after annealing at 200 degrees C, and the compositional mapping obtained after 300 degrees C annealing showed a heavy diffusion of Ga into ZnO layer. Therefore, Gaassisted Cd diffusion is suggested to be responsible for the pore evolution, which is highly relevant to the device degradation after high temperature annealing. (C) 2010 Elsevier B. V. All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/23844http://dx.doi.org/10.1016/j.cap.2010.02.043
ISSN
1567-1739
Appears in Collections:
공과대학 > 화학공학부 > Articles
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