Investigation of the Material Properties of Hydrogenated Amorphous Silicon and Hydrogenated Amorphous Silicon-Germanium for Thin Film Photovoltaic Cells

Title
Investigation of the Material Properties of Hydrogenated Amorphous Silicon and Hydrogenated Amorphous Silicon-Germanium for Thin Film Photovoltaic Cells
Author(s)
손영호손영수[손영수]최시영[최시영]정호준[정호준]손원호[손원호]이태영[이태영]
Keywords
SOLAR-CELLS
Issue Date
201008
Publisher
AMER SCIENTIFIC PUBLISHERS
Citation
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, v.5, no.2, pp.153 - 156
Abstract
A photovoltaic device with hydrogenated amorphous silicon (a-Si:H) and silicon-germanium (a-SiGe:H) in its intrinsic layer deposited using plasma-enhanced chemical vapor deposition (PECVD) was characterized, and the material properties of the intrinsic layer was investigated. An energy dispersive spectrometer (EDS), X-ray diffraction (XRD), and atomic force microscope (AFM) were utilized to study the material composition, crystallinity and surface roughness layers in the intrinsic region, respectively. The surface was amorphous and smooth in a small scan area. We also measured the J-V characteristic of the photovoltaic cell using a solar simulator under standard AM 1.5G conditions, and the efficiency was more than 1%. The results demonstrated the feasibility of the photovoltaic cell.
URI
http://hdl.handle.net/YU.REPOSITORY/23839http://dx.doi.org/10.1166/jno.2010.1083
ISSN
1555-130X
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공과대학 > 컴퓨터공학과 > Articles
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