Amorphous copper tungsten oxide with tunable band gaps

Title
Amorphous copper tungsten oxide with tunable band gaps
Author(s)
Le Chen[Le Chen]Sudhakar Shet[Sudhakar Shet]Houwen Tang[Houwen Tang]안광순Heli Wang[Heli Wang]Yanfa Yan[Yanfa Yan]John Turner[John Turner]Mowafak Al-Jassim [Mowafak Al-Jassim ]
Keywords
PHOTOELECTROCHEMICAL PROPERTIES; FILMS; CRYSTALS; CELLS; WATER
Issue Date
201008
Publisher
AMER INST PHYSICS
Citation
JOURNAL OF APPLIED PHYSICS, v.108, no.4
Abstract
We report on the synthesis of amorphous copper tungsten oxide thin films with tunable band gaps. The thin films are synthesized by the magnetron cosputtering method. We find that due to the amorphous nature, the Cu-to-W ratio in the films can be varied without the limit of the solubility (or phase separation) under appropriate conditions. As a result, the band gap and conductivity type of the films can be tuned by controlling the film composition. Unfortunately, the amorphous copper tungsten oxides are not stable in aqueous solution and are not suitable for the application of photoelectrochemical splitting of water. Nonetheless, it provides an alternative approach to search for transition metal oxides with tunable band gaps. (C) 2010 American Institute of Physics. [doi:10.1063/1.3475714]
URI
http://hdl.handle.net/YU.REPOSITORY/23836http://dx.doi.org/10.1063/1.3475714
ISSN
0021-8979
Appears in Collections:
공과대학 > 화학공학부 > Articles
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