열처리 온도 및 분위기에 따른 다공질 실리콘의 구조 및 광학적 특성

Title
열처리 온도 및 분위기에 따른 다공질 실리콘의 구조 및 광학적 특성
Other Titles
Effects of Annealing Temperature and Atmosphere on Properties of Porous Silicon
Author(s)
김종수최현영[최현영]임광국[임광국]전수민[전수민]조민영[조민영]김군식[김군식]김민수[김민수]이동율[이동율]김진수[김진수]임재영[임재영]
Keywords
Porous silicon; Thermal annealing; Scanning electron microscopy; Photoluminescence; Porous silicon; Thermal annealing; Scanning electron microscopy; Photoluminescence
Issue Date
201008
Publisher
한국전기전자재료학회
Citation
전기전자재료학회논문지, v.23, no.8, pp.581 - 586
Abstract
The porous Si (PS) was annealed at various temperature in air, argon, and nitrogen atmosphere. Structural and optical properties of the annealed PS were investigated by scanning electron microscopy (SEM) and photoluminescence (PL). It is found that the shape of pore is changed from circle to channel as increasing annealing temperature which was annealed in air and argon atmosphere. In case of PS annealed in nitrogen atmosphere, the shape of pore is changed from channel to circle with increase annealing temperature from 600 to 800℃. The PL peak position is blue-shifted with increasing annealing temperature. As annealing temperature increases, the PL intensity of the PS annealed in argon is decreased but that of the PS annealed in nitrogen is increased. It might be due to the formation of Si-N bonds and it passivates the non-radiative centers which is Si dangling bonds on the surface of the PS.
URI
http://hdl.handle.net/YU.REPOSITORY/23765
ISSN
1226-7945
Appears in Collections:
이과대학 > 물리학과 > Articles
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