Optical properties of the InAs/InAlGaAs quantum dots subjected to thermal treatments

Title
Optical properties of the InAs/InAlGaAs quantum dots subjected to thermal treatments
Author(s)
김종수조병구[조병구]김재수[김재수]이광재[이광재]김현준[김현준]박동우[박동우]이철로[이철로]김진수[김진수]배성범[배성범]한원석[한원석]오대곤[오대곤]임재영[임재영]이상준[이상준]노삼규[노삼규]
Keywords
LAYER
Issue Date
201009
Publisher
ELSEVIER SCIENCE SA
Citation
THIN SOLID FILMS, v.518, no.22, pp.6429 - 6431
Abstract
The inter-diffusion kinetics of group-III elements at the interface between self-assembled InAs quantum dots (QDs) and InAlGaAs barriers were investigated indirectly by post-growth annealing treatments and photoluminescence (PL) spectroscopy. The emission wavelength of the InAs/InAlGaAs QDs subjected to thermal annealing at 550 degrees C was 1444 nm at 10K. which indicated a 57 nm red shift compared to the as-grown sample (1387 nm). The emission wavelength was blue-shifted with further increases in annealing temperature to 650 degrees C. Although there was a blue shift in the emission wavelength at an annealing temperature of 600 and 650 degrees C, the emission peak was still longer than that of the as-grown sample. These results were explained by the difference in inter-diffusion probability between group-III elements at the interface between the InAs QDs and InAlGaAs barrier. (C) 2010 Elsevier BM. All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/23703http://dx.doi.org/10.1016/j.tsf.2010.03.051
ISSN
0040-6090
Appears in Collections:
이과대학 > 물리학과 > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE