Temperature dependency and carrier transport mechanisms of Ti/p-type InP Schottky rectifiers

Title
Temperature dependency and carrier transport mechanisms of Ti/p-type InP Schottky rectifiers
Author(s)
V. Janardhanam[V. Janardhanam]이훈기[이훈기]심규환[심규환]홍효봉[홍효봉]이수형[이수형]안광순최철종[최철종]
Keywords
BARRIER DIODES; INTERFACIAL LAYER; CONTACTS; JUNCTIONS; EPITAXY; HEIGHT
Issue Date
201009
Publisher
ELSEVIER SCIENCE SA
Citation
JOURNAL OF ALLOYS AND COMPOUNDS, v.504, no.1, pp.146 - 150
Abstract
We have investigated the temperature dependent current-voltage (I-V) characteristics of Ti Schottky contacts to p-type InP. The Ti/p-type InP Schottky diode yielded an ideality factor of 1.08 showing good rectifying behavior with a barrier height of 0.73 eV at 300 K. The capacitance-voltage (C-V) characteristics of the Ti Schottky contact to p-type InP have been measured at room temperature and at different frequencies. The barrier heights from C-V measurements are calculated to be 0.71, 0.72 and 0.77 eV at 10 kHz, 100 kHz and I MHz, respectively. The discrepancy of barrier heights obtained from I-V at 300 K and C-V characteristics measured at f = 1 MHz at 300 K is negligible due to homogenous nature of Schottky diode structures. The characteristic energy of the diode at 300 K showed thermionic emission to be the dominating current mechanism. The analysis of the reverse current-voltage characteristics of the Ti Schottky contact to p-type InP reveals that the main process involved in leakage current could be associated with the Frenkel-Poole emission at 300 K, while at 350 K and 400 K, the Schottky emission. (C) 2010 Elsevier B.V. All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/23699http://dx.doi.org/10.1016/j.jallcom.2010.05.074
ISSN
0925-8388
Appears in Collections:
공과대학 > 화학공학부 > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE