Improved n-type bottom-contact organic transistors by introducing a poly(3,4-ethylenedioxythiophene):poly(4-styrene sulfonate) coating on the source/drain electrodes

Title
Improved n-type bottom-contact organic transistors by introducing a poly(3,4-ethylenedioxythiophene):poly(4-styrene sulfonate) coating on the source/drain electrodes
Author(s)
김세현Hong, Kipyo[Hong, Kipyo]Yang, Chanwoo[Yang, Chanwoo]Jang, Jaeyoung[Jang, Jaeyoung]Cha, Hyojung[Cha, Hyojung]Park, Chan Eon[Park, Chan Eon]
Keywords
FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; LEVEL
Issue Date
201009
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.97, no.10
Abstract
We improved the device performance of N,N'-ditridecyl-3,4,9,10-perylenetetracarboxylic diimide (PTCDI-C13) n-type field-effect transistors, increasing electron-mobility from 0.003 to 0.101 cm(2)/V s, by applying a coating of poly(3,4-ethylenedioxythiophene):poly(4-styrene sulfonate) (PEDOT:PSS) to gold source/drain (S/D) electrodes, thereby reducing contact resistance in the devices. Crystallinity and electronic structure studies suggested that the improved device performance resulted from higher crystallinity of PTCDI-C13 on the PEDOT:PSS-coated S/D electrodes at the interface between the electrode and the channel. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3488817]
URI
http://hdl.handle.net/YU.REPOSITORY/23680http://dx.doi.org/10.1063/1.3488817
ISSN
0003-6951
Appears in Collections:
공과대학 > 화학공학부 > Articles
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