Different shape of GaAs quantum structures under various growth conditions

Title
Different shape of GaAs quantum structures under various growth conditions
Author(s)
김종수김재수[김재수]조병구[조병구]박동우[박동우]이철로[이철로]김진수[김진수]정문석[정문석]변지수[변지수]강훈수[강훈수]송진동[송진동]최원준[최원준]이정일[이정일]이상준[이상준]노삼규[노삼규]오대곤[오대곤]임재영[임재영]
Keywords
DROPLET EPITAXY; DOTS
Issue Date
201009
Publisher
ELSEVIER SCIENCE SA
Citation
THIN SOLID FILMS, v.518, no.22, pp.6500 - 6504
Abstract
We report the influences of growth parameters on the characteristics of GaAs quantum rings (QRs) and quantum dots (QDs) formed on AlGaAs/GaAs by the droplet epitaxy (DE) method. After forming Ga droplets on the AlGaAs/GaAs surface, varying amounts of arsenic (As) flux were introduced to fabricate the GaAs quantum structures. By decreasing the As flux from 8 x 10(-5) to 3 x 10(-5) Torr, the shape of the GaAs quantum structures was changed from QDs to elongated QRs. With further decreasing As flux, the shape of the elongated QRs became symmetric. The formation characteristics of the GaAs QRs from the QDs with the amount of As flux were discussed in terms of migration behaviors of the gallium (Ga) atoms on the GaAs (001)-c(4 x 4) surface. The effects of the amount of Ga supply and the growth temperature for the deposition of Ga droplets on the formation of the GaAs quantum structures were also considered. (C) 2010 Elsevier B.V. All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/23651http://dx.doi.org/10.1016/j.tsf.2010.03.151
ISSN
0040-6090
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이과대학 > 물리학과 > Articles
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