Influence of gas ambient on the synthesis of co-doped ZnO:(Al,N) films for photoelectrochemical water splitting

Title
Influence of gas ambient on the synthesis of co-doped ZnO:(Al,N) films for photoelectrochemical water splitting
Author(s)
Sudhakar Shet[Sudhakar Shet]안광순Todd Deutsch[Todd Deutsch]Heli Wang[Heli Wang]Ravindra Nuggehalli[Ravindra Nuggehalli]Yanfa Yan[Yanfa Yan]John Turner[John Turner]Mowafak Al-Jassim [Mowafak Al-Jassim ]
Keywords
P-TYPE ZNO; THIN-FILMS; CODOPING METHOD; HYDROGEN; TIO2; CELLS
Issue Date
201009
Publisher
ELSEVIER SCIENCE BV
Citation
JOURNAL OF POWER SOURCES, v.195, no.17, pp.5801 - 5805
Abstract
Al and N co-doped ZnO thin films, ZnO:(AI,N), are synthesized by radio-frequency magnetron sputtering in mixed Ar and N(2) and mixed O(2) and N(2) gas ambient at 100 degrees C. The ZnO:(AI,N) films deposited in mixed Ar and N(2) gas ambient did not incorporate N, whereas ZnO:(AI,N) films grown in mixed O(2) and N(2) gas ambient showed enhanced N incorporation and crystallinity as compared to ZnO:N thin films grown in the same gas ambient. As a result, ZnO:(AI,N) films grown in mixed O(2) and N(2) gas ambient showed higher photocurrents than the ZnO:(Al,N) thin films deposited in mixed Ar and N(2) gas ambient. Our results indicate that the gas ambient plays an important role in N incorporation and crystallinity control in Al and N co-doped ZnO thin films. (C) 2010 Elsevier By. All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/23649http://dx.doi.org/10.1016/j.jpowsour.2010.03.058
ISSN
0378-7753
Appears in Collections:
공과대학 > 화학공학부 > Articles
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