Effects of Interruption Growth on the Properties of ZnO Active Layers Grown by Using Plasma-assisted Molecular Beam Epitaxy

Title
Effects of Interruption Growth on the Properties of ZnO Active Layers Grown by Using Plasma-assisted Molecular Beam Epitaxy
Author(s)
김종수최현영[최현영]김군식[김군식]조민영[조민영]전수민[전수민]김도엽[김도엽]김민수[김민수]임광국[임광국]김형근[김형근]임재영[임재영]이동율[이동율]김진수[김진수]손정식[손정식]이주인[이주인]
Keywords
THIN-FILMS; OPTICAL-PROPERTIES; BUFFER LAYERS; SI; DEPOSITION; SAPPHIRE; QUALITY
Issue Date
201009
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.57, no.3, pp.469 - 473
Abstract
ZnO active layers were grown on Si (100) substrates by using plasma-assisted molecular beam epitaxy (PA-MBE). The initial regions of the ZnO active layers were deposited by using an interruption growth method (IGM), with the following ZnO active layers being grown in succession for 80 min without interruption. X-ray diffraction (XRD), scanning electron microscopy (SEM), and photoluminescence (PE) measurements were carried out to investigate the structural and the optical properties of the ZnO active layers. The full width at half maximum (FWHM) of the rocking curve observed for the ZnO (002) XRD peak decreased from 0.191 degrees to 0.176 degrees and the intensity of the XRD peak increased with increasing Zn beam ON time. The surface morphology shows a net-like structure that changes with the Zn beam ON time. The PL intensity of the near-band-edge emission (NBE) peak is enhanced in the ZnO active layers grown on interrupted layers, and the NBE peak position is blue-shifted with increasing Zn beam ON time, which was caused by an enhancement of the tensile stress. The above results imply that the IGM is effective in improving the crystalline quality and the luminescence efficiency.
URI
http://hdl.handle.net/YU.REPOSITORY/23630http://dx.doi.org/10.3938/jkps.57.469
ISSN
0374-4884
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이과대학 > 물리학과 > Articles
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