Influence of InAs Coverage on Transition of Size Distribution and Optical Properties of InAs Quantum Dots

Title
Influence of InAs Coverage on Transition of Size Distribution and Optical Properties of InAs Quantum Dots
Author(s)
김종수김군식[김군식]전수민[전수민]조민영[조민영]최현영[최현영]김도엽[김도엽]김민수[김민수]권영수[권영수]최정우[최정우]김진수[김진수]임재영[임재영]
Keywords
TEMPERATURE-DEPENDENCE; PHOTOLUMINESCENCE; GROWTH; LAYER; SHAPE
Issue Date
201010
Publisher
POLISH ACAD SCIENCES INST PHYSICS
Citation
ACTA PHYSICA POLONICA A, v.118, no.4, pp.673 - 676
Abstract
The influence of In As coverage on the formation of self-assembled quantum dots grown by molecular-beam epitaxy was investigated by atomic force microscopy and photoluminescence measurements. As the In As coverage increased from 2.0 to 3.0 monolayers, the quantum dot density decreased from 1.1 x 10(11) to 1.36 x 10(10) cm(-2). This result could be attributed to the coalescence of neighboring small In As quantum dots resulting in the formation of much larger In As quantum dots with lower quantum dot density. Atomic force microscopy results revealed that as the In As quantum dot coverage increased, the transition of size distribution of In As quantum dots from single-modal to multimodal occurred. The temperature-dependent photoluminescence spectra showed that the photoluminescence spectra red shifted and the photoluminescence peak intensity decreased as the In As coverage increased. The thermal activation energy was strongly dependent on the In As coverage, and for In As quantum dots with 3.0 ML thick In As coverage, this energy was estimated to be 147 meV.
URI
http://hdl.handle.net/YU.REPOSITORY/23499
ISSN
0587-4246
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이과대학 > 물리학과 > Articles
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