Effect of substrate temperature on the photoelectrochemical responses of Ga and N co-doped ZnO films

Title
Effect of substrate temperature on the photoelectrochemical responses of Ga and N co-doped ZnO films
Author(s)
S. Shet[S. Shet]안광순H. Wang[H. Wang]R. Nuggehalli[R. Nuggehalli]Y. Yan[Y. Yan]J. Turner[J. Turner]M. Al-Jassimm[M. Al-Jassimm]
Keywords
P-TYPE ZNO; THIN-FILMS; HYDROGEN-PRODUCTION; WATER; TIO2; PHOTOCATALYSIS; PERFORMANCE; ARRAYS
Issue Date
201010
Publisher
SPRINGER
Citation
JOURNAL OF MATERIALS SCIENCE, v.45, no.19, pp.5218 - 5222
Abstract
Ga-N co-doped ZnO thin films with reduced bandgaps were deposited on F-doped tin-oxide-coated glass by radio-frequency magnetron sputtering at different substrate temperatures in mixed N(2) and O(2) gas ambient. We found that Ga-N co-doped ZnO films exhibited enhanced crystallinity when compared to undoped ZnO films grown under the same conditions. Furthermore, Ga-N co-doping ensured enhanced N-incorporation ZnO thin films as the substrate temperature is increased. As a result, Ga-N co-doped ZnO thin films exhibited much improved photoelectrochemical (PEC) response, compared to ZnO thin films. Our results therefore suggest that the passive co-doping approach could be a means to improve PEC response for bandgap-reduced wide-bandgap oxides through impurity incorporation.
URI
http://hdl.handle.net/YU.REPOSITORY/23476http://dx.doi.org/10.1007/s10853-010-4561-x
ISSN
0022-2461
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공과대학 > 화학공학부 > Articles
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