Structural and Electrical Properties of Atomic Layer Deposited Al-Doped ZnO Films

Title
Structural and Electrical Properties of Atomic Layer Deposited Al-Doped ZnO Films
Author(s)
김수현이도중[이도중]김현미[김현미]권장연[권장연]최효지[최효지]김기범[김기범]
Keywords
OXIDE THIN-FILMS; PULSED-LASER DEPOSITION; TRANSPARENT CONDUCTING OXIDES; CHEMICAL-VAPOR-DEPOSITION; SENSITIZED SOLAR-CELLS; INDIUM-OXIDE; OPTICAL-PROPERTIES; SPRAY-PYROLYSIS; MAGNETIC-FIELD; GROWTH
Issue Date
201011
Publisher
WILEY-BLACKWELL
Citation
ADVANCED FUNCTIONAL MATERIALS, v.21, no.3, pp.448 - 455
Abstract
Structural and electrical properties of Al-doped ZnO (AZO) films deposited by atomic layer deposition (ALD) are investigated to study the extrinsic doping mechanism of a transparent conducting oxide. ALD-AZO films exhibit a unique layer-by-layer structure consisting of a ZnO matrix and Al(2)O(3) dopant layers, as determined by transmission electron microscopy analysis. In these layered AZO films, a single Al(2)O(3) dopant layer deposited during one ALD cycle could provide approximate to 4.5 x 10(13) cm(-2) free electrons to the ZnO. The effective field model for doping is suggested to explain the decrease in the carrier concentration of ALD-AZO films when the interval between the Al(2)O(3) layers is reduced to less than approximate to 2.6 nm (>3.4 at% Al). By correlating the electrical and structural properties, an extrinsic doping mechanism of ALD-AZO films is proposed in which the incorporated Al atoms take oxygen from the ZnO matrix and form doubly charged donors, such as oxygen vacancies or zinc interstitials.
URI
http://hdl.handle.net/YU.REPOSITORY/23380http://dx.doi.org/10.1002/adfm.201001342
ISSN
1616-301X
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공과대학 > 신소재공학부 > Articles
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