Properties of Cu(In,Ga)Se-2 Thin Film by Co-Evaporation

Title
Properties of Cu(In,Ga)Se-2 Thin Film by Co-Evaporation
Author(s)
전찬욱이은우[이은우]박순용[박순용]이상환[이상환]송갑득[송갑득]이성호[이성호]허광수[허광수]
Issue Date
201011
Publisher
TAYLOR & FRANCIS LTD
Citation
MOLECULAR CRYSTALS AND LIQUID CRYSTALS, v.532, pp.464 - 470
Abstract
Cu(In,Ga)Se-2 (CIGS) compound, which has high optical absorption coefficient as direct transition type semiconductor, is very suitable for thin film solar cell due to its high thermal stability and moisture tolerance as well as its low fabrication cost compared to the standard crystalline Si solar cell. In this research, it was tried to control the absorption capability of CIGS layer by changing Ga/(In+Ga) ratio. The composition of film was changed by controlling the effusion-cell temperature of Cu, In, Ga at a fixed Se flux. Each sample was analyzed by using SEM (scanning electron microscope), EDS (energy dispersive spectroscopy), XRD (X-ray diffractometer) to confirm the optimum composition ratio of Cu/(In+Ga) = 0.82 similar to 0.95, Ga/(In+Ga) = 0.26 similar to 0.31, Cu/Se = 0.5.
URI
http://hdl.handle.net/YU.REPOSITORY/23354http://dx.doi.org/10.1080/15421406.2010.497111
ISSN
1542-1406
Appears in Collections:
공과대학 > 화학공학부 > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE