Hysteresis behaviour of low-voltage organic field-effect transistors employing high dielectric constant polymer gate dielectrics

Title
Hysteresis behaviour of low-voltage organic field-effect transistors employing high dielectric constant polymer gate dielectrics
Author(s)
김세현Yun, Won Min[Yun, Won Min]Kwon, Oh-Kwan[Kwon, Oh-Kwan]Hong, Kipyo[Hong, Kipyo]Yang, Chanwoo[Yang, Chanwoo]Choi, Woon-Seop[Choi, Woon-Seop]Park, Chan Eon[Park, Chan Eon]
Keywords
THIN-FILM TRANSISTORS; PENTACENE; PERFORMANCE; SEMICONDUCTORS; CIRCUITS; MOBILITY; INSULATORS; STATES
Issue Date
201011
Publisher
IOP PUBLISHING LTD
Citation
JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.43, no.46
Abstract
Here, we report on the fabrication of low-voltage-operating pentacene-based organic field-effect transistors (OFETs) that utilize crosslinked cyanoethylated poly(vinyl alcohol) (CR-V) gate dielectrics. The crosslinked CR-V-based OFET could be operated successfully at low voltages (below 4 V), but abnormal behaviour during device operation, such as uncertainty in the field-effect mobility (mu) and hysteresis, was induced by the slow polarization of moieties embedded in the gate dielectric (e.g. polar functionalities, ionic impurities, water and solvent molecules). In an effort to improve the stability of OFET operation, we measured the dependence of mu and hysteresis on dielectric thickness, CR-V crosslinking conditions and sweep rate of the gate bias. The influence of the CR-V surface properties on mu, hysteresis, and the structural and morphological features of the pentacene layer grown on the gate dielectric was characterized and compared with the properties of pentacene grown on a polystyrene surface.
URI
http://hdl.handle.net/YU.REPOSITORY/23347http://dx.doi.org/10.1088/0022-3727/43/46/465102
ISSN
0022-3727
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공과대학 > 화학공학부 > Articles
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