액상소결 시의 -SiC의 입자성장 방지

Title
액상소결 시의 -SiC의 입자성장 방지
Other Titles
Prevention of Grain Growth during the Liquid-Phase Assisted Sintering of -SiC
Author(s)
길건영[길건영]노비얀토 알피안[노비얀토 알피안]한영환윤당혁
Keywords
Silicon carbide; Composites; Electrophoretic deposition; Grain growth; Sintering
Issue Date
201011
Publisher
한국세라믹학회
Citation
한국세라믹학회지, v.47, no.6, pp.485 - 490
Abstract
In our previous studies, continuous SiC fiber-reinforced SiC-matrix composites (SiCf/SiC) had been fabricated by two different slurry infiltration methods: vacuum infiltration and electrophoretic deposition (EPD). 12 wt% of Al2O3-Y2O3-MgO with respect to SiC powder was used as additives for liquid-phase assisted sintering. After hot pressing at 1750°C under 20MPa for 2 h in Ar atmosphere, a high composite density could be achieved for both cases, whereas the problems such as large grain size and non-uniform distribution of liquid phase were observed, which was resulted in the relatively poor mechanical properties of composites. Therefore, efforts have been made to reduce the grain growth during the sintering, including the optimization for hot pressing condition and utilization of spark plasma sintering using a SiC monolith. Based on the results, spark plasma sintering was found to be effective method in decreasing the amount of sintering additive, time and grain growth, which will be explained in comparison to the results of hot pressing in this paper.
URI
http://hdl.handle.net/YU.REPOSITORY/23334
ISSN
1229-7801
Appears in Collections:
공과대학 > 신소재공학부 > Articles
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