InGaN-Based Resonant-Cavity Light-Emitting Diodes with a ZrO2/SiO2 Distributed Bragg Reflector and Metal Reflector

Title
InGaN-Based Resonant-Cavity Light-Emitting Diodes with a ZrO2/SiO2 Distributed Bragg Reflector and Metal Reflector
Author(s)
박시현김재훈[김재훈]이승재[이승재]
Issue Date
201012
Publisher
JAPAN SOC APPLIED PHYSICS
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS, v.49, no.12
Abstract
We fabricated InGaN-based resonant-cavity light-emitting diodes (RC-LEDs) in which one of the reflectors forming the cavity was made of Ag metal and the other was a ZrO2/SiO2 dielectric distributed Bragg reflector (DBR). Ag metal was deposited onto an InGaN epitaxial layer grown on a sapphire substrate. A ZrO2/SiO2 DBR was deposited onto n-GaN after a Ag/InGaN/sapphire sample was bonded to a silicon substrate using Au bonding metal and the sapphire substrate was removed by a laser lift-off process. Multiple emission modes with a narrowed spectrum were observed with corresponding dips in the reflectance of the resonant cavity, which was examined by microreflectance measurements. The output intensity of the RC-LED was higher than that of a conventional LED and the turn-on voltage increased with a slight decrease in series resistance. The output power of the RC-LED in a 1 x 1 mm(2) chip increased linearly with the injection of current up to a 500 mA. (C) 2010 The Japan Society of Applied Physics
URI
http://hdl.handle.net/YU.REPOSITORY/23286http://dx.doi.org/10.1143/JJAP.49.122102
ISSN
0021-4922
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공과대학 > 전자공학과 > Articles
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