SnO2: CuSb2O6 Thin Films Prepared by Pulsed Laser Deposition

Title
SnO2: CuSb2O6 Thin Films Prepared by Pulsed Laser Deposition
Author(s)
이희영이채종[이채종]이준형[이준형]김정주[김정주]이재열
Keywords
DOPED TIN OXIDE; ELECTRICAL-PROPERTIES; ELECTROCHROMISM
Issue Date
201012
Publisher
TAYLOR & FRANCIS LTD
Citation
INTEGRATED FERROELECTRICS, v.115, pp.34 - 40
Abstract
SnO2 thin films doped with CuSb2O6 were prepared by pulsed laser deposition method, in an attempt to evaluate the effect of Cu and Sb co-doping on optical and electrical properties. Alkaline-free borosilicate glass substrates were used as substratewhere the substrate temperature was maintained in the range of 575 similar to 650 degrees C during deposition with oxygen pressure of 3 similar to 5 mTorr and laser energy density of 1 Jcm(-2). The minimum electrical resistivity value was obtained from SnO2:8% CuSb2O6 films, which was approximately 1.3 x 10(-3) Omega cm, while its optical transmittance is relatively poor with similar to 46% at 6000 angstrom. The highest optical transmittance value was obtained from SnO2:2% CuSb2O6 films, which was about 80% at 6000 angstrom, where its electrical resistivity value was 5.9 x 10(-3) Omega cm.
URI
http://hdl.handle.net/YU.REPOSITORY/23270http://dx.doi.org/10.1080/10584587.2010.503507
ISSN
1058-4587
Appears in Collections:
공과대학 > 신소재공학부 > Articles
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