Direct Observation of Interfacial Morphology in Poly(3-hexylthiophene) Transistors: Relationship between Grain Boundary and Field-Effect Mobility

Title
Direct Observation of Interfacial Morphology in Poly(3-hexylthiophene) Transistors: Relationship between Grain Boundary and Field-Effect Mobility
Author(s)
김세현Choi, Danbi[Choi, Danbi]Jin, Sangwoo[Jin, Sangwoo]Lee, Youngmin[Lee, Youngmin]Chung, Dae Sung[Chung, Dae Sung]Hong, Kipyo[Hong, Kipyo]Yang, Chanwoo[Yang, Chanwoo]Jung, Jungwoon[Jung, Jungwoon](Park, Chan Eon[(Park, Chan Eon]Ree, Moonhor[Ree, Moonhor]
Keywords
THIN-FILM TRANSISTORS; X-RAY-SCATTERING; REGIOREGULAR POLY(3-HEXYLTHIOPHENE); CARRIER MOBILITY; MOLECULAR-WEIGHT; POLYTHIOPHENE; DEPENDENCE; TEMPERATURE; TRANSPORT; POLYMERS
Issue Date
201001
Publisher
AMER CHEMICAL SOC
Citation
ACS APPLIED MATERIALS & INTERFACES, v.2, no.1, pp.48 - 53
Abstract
We investigated the effects of microstructural (crystallization and molecular orientation) and morphological alternation (grain boundary) of poly(3-hexylthiophene) (P3HT) films on the field-effect mobility (mu) before (as-spun P3HT) and after (melt-crystallized P3HT) melting of P3HT films. Although grazing incidence X-ray scattering shows that melt-crystallized P3HT has a more highly ordered edge-on structure than as-spun P3HT, the melt-crystallized P3HT reveals mu = 0.003 cm(2) V(-1) s(-1): this is an order of magnitude lower than that of as-spun P3HT (mu = 0.01 cm(2) V(-1) s(-1)). In addition, the interfacial morphologies of the bottom surfaces of P3HT films, which are attached to the gate dielectric, were investigated using a him transfer technique. The melt-crystallized P3HT at this interface consists of well-developed nanowire crystallites with well-defined grain boundaries that act as trap states, as verified by analysis of the temperature-dependence of mu. The remarkable reduction of mu in low-molecular-weight P3HT film (8 kg/mol) that results from melt-crystallization is due to the increased number of well-defined grain boundaries.
URI
http://hdl.handle.net/YU.REPOSITORY/23034http://dx.doi.org/10.1021/am9005385
ISSN
1944-8244
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공과대학 > 화학공학부 > Articles
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