Synthesis and characterization of band gap-reduced ZnO:N and ZnO:(Al,N) films for photoelectrochemical water splitting

Title
Synthesis and characterization of band gap-reduced ZnO:N and ZnO:(Al,N) films for photoelectrochemical water splitting
Author(s)
Sudhakar Shet[Sudhakar Shet]안광순Todd Deutsch[Todd Deutsch]Heli Wang[Heli Wang]N. Ravindra[N. Ravindra]Yanfa Yan[Yanfa Yan]John Turner[John Turner]M. Al-Jassim[M. Al-Jassim]
Keywords
P-TYPE ZNO; THIN-FILMS; OPTICAL-PROPERTIES; CELLS; PHOTOCATALYSIS; CONDUCTION; HYDROGEN
Issue Date
201001
Publisher
MATERIALS RESEARCH SOC
Citation
JOURNAL OF MATERIALS RESEARCH, v.25, no.1, pp.69 - 75
Abstract
ZnO thin films with significantly reduced band gaps were synthesized by doping N and codoping Al and N at 100 degrees C. All the films were synthesized by radiofrequency magnetron sputtering on F-doped tin-oxide-coated glass. We found that codoped ZnO:(Al,N) thin films exhibited significantly enhanced crystallinity compared with ZnO doped solely with N, ZnO:N, at the same growth conditions. Furthermore, annealed ZnO:(Al,N) thin films exhibited enhanced N incorporation over ZnO:N films. As a result, ZnO:(Al,N) films exhibited better photocurrents than ZnO:N films grown with pure N doping, suggesting that charge-compensated donor-acceptor codoping could be a potential method for band gap reduction of wide-band gap oxide materials to improve their photoelectrochemical performance.
URI
http://hdl.handle.net/YU.REPOSITORY/23032http://dx.doi.org/10.1557/JMR.2010.0017
ISSN
0884-2914
Appears in Collections:
공과대학 > 화학공학부 > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE