Effect of Fe doping on the room temperature ferromagnetism in chemically synthesized (In1-xFex)(2)O-3 (0 <= x <= 0.07) magnetic semiconductors

Title
Effect of Fe doping on the room temperature ferromagnetism in chemically synthesized (In1-xFex)(2)O-3 (0 <= x <= 0.07) magnetic semiconductors
Author(s)
김기현제야슬란챤드라다스M. Balasubramanian[M. Balasubramanian]Dong-Sik Bae[Dong-Sik Bae]Shalendra Kumar[Shalendra Kumar]
Keywords
IN2O3
Issue Date
201001
Publisher
ELSEVIER SCIENCE BV
Citation
CURRENT APPLIED PHYSICS, v.10, no.1, pp.333 - 336
Abstract
Observation of room temperature ferromagnetism in Fe doped In2O3 samples (In1-xFex)(2)O-3 (0 <= x <= 0.07) prepared by co-precipitation technique is reported. Lattice parameter obtained from powder X software shows distinct shrinkage of the lattice constant indicating an actual incorporation of Fe ions into the In2O3 lattice. X-ray diffraction data measurements show that the entire sample exhibits single phase polycrystalline behavior. SEM micrographs showed the prepared powder was in the range 25-36 nm. SEM EDS mapping showed the presence of Fe and In ions in the Fe doped In2O3 sample. The highest remanence magnetization moment (6.624 x 10(-4) emu/g) is reached in the sample with x = 0.03. (C) 2009 Elsevier B.V. All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/23002http://dx.doi.org/10.1016/j.cap.2009.06.018
ISSN
1567-1739
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이과대학 > 물리학과 > Articles
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