Controlling dislocation positions in silicon germanium (SiGe) buffer layers by local oxidation

Title
Controlling dislocation positions in silicon germanium (SiGe) buffer layers by local oxidation
Author(s)
김수현Quanli Hu[Quanli Hu]서일[서일]Zhenning Zhang[Zhenning Zhang]이승현[이승현]김현미[김현미]김용상[김용상]이현호[이현호]Ya-Hong Xie[Ya-Hong Xie]김기범[김기범]윤태식[윤태식]
Keywords
PATTERNED SI; STRAIN; HETEROSTRUCTURES; FABRICATION; MECHANISM; KINETICS; DENSITY
Issue Date
201001
Publisher
ELSEVIER SCIENCE SA
Citation
THIN SOLID FILMS, v.518, pp.S217 - S221
Abstract
The method of controlling dislocation positions via local oxidation of 80 nm thick Si(0.8)Ge(0.2) buffer layer on Si substrate is investigated. The strained SiGe layer is locally exposed to oxidation by patterning Si(3)N(4) mask layer on SiGe with perpendicularly crossing stripe patterns with < 110 > directions. The local oxidation of patterned SiGe regions leads to increased stress to the remaining SiGe either via Ge pileup or volume expansion during oxidation. The increased stress in the SiGe region underneath the oxide increases dislocation nucleation rate. The preferential nucleation of dislocations and subsequent propagation of dislocations through non-oxidized regions results in reduced threading dislocation density to 10(6-7)/cm(2). which is lower than that of the conventional constant composition SiGe buffer layer. Further reduction of threading dislocation density is expected by optimizing the oxidation conditions and pattern size and shape for local oxidation. (C) 2009 Elsevier B.V. All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/22996http://dx.doi.org/10.1016/j.tsf.2009.10.092
ISSN
0040-6090
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공과대학 > 신소재공학부 > Articles
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