Nonvolatile memory characteristics of atomic layer deposited Ru nanocrystals with a SiO2/Al2O3 bilayered tunnel barrier

Title
Nonvolatile memory characteristics of atomic layer deposited Ru nanocrystals with a SiO2/Al2O3 bilayered tunnel barrier
Author(s)
김수현이도중[이도중]임성수[임성수]김기수[김기수]김기범[김기범]
Keywords
GATE DIELECTRICS; METAL GATE; CMOS TECHNOLOGY; WORK-FUNCTION; DEVICES; ELECTRODES; HFO2
Issue Date
201001
Publisher
AMER INST PHYSICS
Citation
JOURNAL OF APPLIED PHYSICS, v.107, no.1
Abstract
This paper reports a formation process and electrical properties of a nonvolatile memory structure with atomic layer deposited Ru nanocrystals and a SiO2/Al2O3 bilayered tunnel barrier. Al2O3 tunnel barrier/Ru nanocrystals/Al2O3 blocking barrier were deposited sequentially on a SiO2 2 nm/Si substrate by an in situ atomic layer deposition (ALD) process. Ru nanocrystals grown on the Al2O3 surface for 80 ALD cycles had a spatial density of 2.4x10(12) cm(-2) and an average diameter of 2.6 nm (38% standard deviation in the diameter). Charging/discharging behavior of the Ru nanocrystals embedded in the metal-oxide-semiconductor capacitor structure was examined by programming/erase operations and comprehended in terms of asymmetric barrier height of the bilayered tunnel barrier. The memory structure showed charge retention of 91% and 85% after 10(5) s at room temperature and at 85 degrees C, respectively.
URI
http://hdl.handle.net/YU.REPOSITORY/22989http://dx.doi.org/10.1063/1.3275346
ISSN
0021-8979
Appears in Collections:
공과대학 > 신소재공학부 > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE