Dependence of Pentacene Crystal Growth on Dielectric Roughness for Fabrication of Flexible Field-Effect Transistors

Title
Dependence of Pentacene Crystal Growth on Dielectric Roughness for Fabrication of Flexible Field-Effect Transistors
Author(s)
김세현Yang, Hoichang[Yang, Hoichang]Yang, Chanwoo[Yang, Chanwoo]Park, Chan Eon[Park, Chan Eon]Jang, Mi[Jang, Mi]
Keywords
THIN-FILM TRANSISTORS; ELECTRONIC TRANSPORT; GATE-DIELECTRICS; PERFORMANCE; MORPHOLOGY; MONOLAYER; LAYER
Issue Date
201002
Publisher
AMER CHEMICAL SOC
Citation
ACS APPLIED MATERIALS & INTERFACES, v.2, no.2, pp.391 - 396
Abstract
The dependence of pentacene nanostructures on gate dielectric surfaces were investigated for flexible organic field-effect transistor (OFET) applications. Two bilayer types of polymer/aluminum oxide (Al(2)O(3)) gate dielectrics were fabricated on commercial Al foils laminated onto a polymer back plate. Some Al foils were directly used as gate electrodes, and others were smoothly polished by an electrolytic etching. These At surfaces were then anodized and coated with poly(alpha-methyl styrene) (PAMS). For PAMS/Al(2)O(3) dielectrics onto etched Al foils, surface roughness up to similar to 1 nm could be reached, although isolated dimples with a lateral diameter of several micrometers were still present. On PAMS/Al(2)O(3) dielectrics (surface roughness >40 nm) containing mechanical grooves of Al foil, average hole mobility (mu(FET)) of 50 nm thick pentacene-FETs under the low operating voltages (vertical bar V vertical bar < 6 V) was similar to 0.15 cm(2) V(-1) s(-1), in contrast, pentacene-FETs employing the etched Al gates exhibited mu(FET) of similar to 0.39 cm(2) V(-1) s(-1), which was comparable to that of reference samples with PAMS/Al(2)O(3) dielectrics onto flat sputtered Al gates. Conducting-probe atomic force microscopy and two-dimensional X-ray diffraction of pentacene films with various thicknesses revealed different out-of-plane and in-plane crystal orderings of pentacene, depending on the surface roughness of the gate dielectrics.
URI
http://hdl.handle.net/YU.REPOSITORY/22905http://dx.doi.org/10.1021/am900652h
ISSN
1944-8244
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공과대학 > 화학공학부 > Articles
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