Effect of incident angle of target molecules on electrical property of Al-doped ZnO thin films prepared by RF magnetron sputtering

Title
Effect of incident angle of target molecules on electrical property of Al-doped ZnO thin films prepared by RF magnetron sputtering
Author(s)
전찬욱이상환[이상환]정재학김수현이도경[이도경]
Keywords
ENERGY; ATOMS
Issue Date
201003
Publisher
ELSEVIER SCIENCE BV
Citation
CURRENT APPLIED PHYSICS, v.10, pp.S286 - S289
Abstract
About 2 wt % Al(2)O(3) doped ZnO thin films were prepared by using radio-frequency magnetron sputtering method The electric property of the films was found to be heavily dependent on the incident angle of the sputtered particle, which is defined by the lateral distance of the substrate against the target center With higher incident angle of the target particles arriving at the substrate, the electrical conductance of the film was improved by a factor of 5 and the film resistivity showed 1 x 10(-3) Omega cm The preferred orientation of ZrO(0 0 0 2) crystal plane of the film deposited at various angles were found to be inclined as much as 0 7 degrees-4 6 degrees against the surface normal and showed to run parallel to the incident direction of target particles. (C) 2009 Elsevier B.V. All tights reserved
URI
http://hdl.handle.net/YU.REPOSITORY/22778http://dx.doi.org/10.1016/j.cap.2009.04.021
ISSN
1567-1739
Appears in Collections:
공과대학 > 화학공학부 > Articles
공과대학 > 신소재공학부 > Articles
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