Nitrogen-passivation Effects of Si Substrates on the Properties of ZnO Epitaxial Layers Grown by Using Plasma-assisted Molecular Beam Epitaxy

Title
Nitrogen-passivation Effects of Si Substrates on the Properties of ZnO Epitaxial Layers Grown by Using Plasma-assisted Molecular Beam Epitaxy
Author(s)
김종수김민수[김민수]김군식[김군식]조민영[조민영]김도엽[김도엽]최현영[최현영]전수민[전수민]임광국[임광국]임재영[임재영]이동률[이동률]김진수[김진수]손정식[손정식]이주인[이주인]
Keywords
PULSED-LASER DEPOSITION; TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE; CHEMICAL-VAPOR-DEPOSITION; THIN-FILMS; BUFFER LAYER; OPTICAL-PROPERTIES; MBE; THICKNESS; QUALITY
Issue Date
201003
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.56, no.3, pp.827 - 831
Abstract
ZnO epilayers were grown on pretreated Si (100) substrates by using a N-2 plasma and plasma-assisted molecular beam epitaxy (PA-MBE). The pretreatment for the surfaces of the Si substrates was conducted at different temperature in the range from 100 to 700 degrees C before the, growth. High-resolution X-ray diffraction (HR-XRD), atomic force microscopy (AFM), and photoluminescence (PL) measurements were carried out to investigate the effects of the pretreatment on the properties of the ZnO epilayers. All samples show the typical XRD patterns, AFM images, and PL emission peaks for ZnO. A higher intensity and a narrower full width at half maximum (FWHM) of the XRD (002) diffraction peak are observed from the ZnO epilayers grown on the pretreated substrates. The residual stress of the ZnO epilayers is relaxed, and the average grain size is gradually increased as the pretreatment temperature is increased to 300 degrees C. The luminescent properties of the ZnO epilayers grown on the Si pretreated at a pretreatment temperature of 100 degrees C are enhanced. However, the ZnO epilayers grown on the Si pretreated at the temperature of 300 degrees C show anomalous PL behaviors. With further increases in the pretreatment temperature Lip to 700 degrees C, the nitrogen-passivation efficiency of the substrate surface is degraded. Therefore, a pretreatment temperature below 300 degrees C during the pretreatment process is the most suitable for obtaining high-quality ZnO epilayers with good luminescence performance.
URI
http://hdl.handle.net/YU.REPOSITORY/22768http://dx.doi.org/10.3938/jkps.56.827
ISSN
0374-4884
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이과대학 > 물리학과 > Articles
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