In-Situ Transmission Electron Microscopy Investigation of the Interfacial Reaction between Er and SiO2 Films

Title
In-Situ Transmission Electron Microscopy Investigation of the Interfacial Reaction between Er and SiO2 Films
Author(s)
최철종[최철종]강승민[강승민]홍효봉[홍효봉]이수형[이수형]김진규[김진규]안광순윤종원[윤종원]
Keywords
STABILITY; SI(100); HFO2; ZRO2
Issue Date
201003
Publisher
JAPAN INST METALS
Citation
MATERIALS TRANSACTIONS, v.51, no.4, pp.793 - 798
Abstract
We fabricated metal-oxide-semiconductor (MOS) devices with a high-k Er-silicate gate dielectric, and demonstrated their electrical performance. The increase in the rapid thermal annealing (RTA) temperature leads to a reduction of the equivalent oxide thickness (Ear), which is attributed in par to the thickness evolution of Er-silicate film and to the chemical bonding change from an Si-rich to an Er-rich silicate. The in-situ investigation of the interfacial reaction between the Er and SiO2 film using a high-voltage electron microscopy (HVEM) revealed a linear relationship between the squared thickness of Er-silicate layer and in-situ annealing time, indicating that the Er-silicate growth is a diffusion-controlled process. The parabolic growth constants of the Er-silicate film were calculated to be 2.3 x 10(-16) and 9.3 x 10(-16) cm(2)/s for in-situ annealing temperatures of 350 and 450 degrees C, respectively. [doi:10.2320/matertrans.M2009371]
URI
http://hdl.handle.net/YU.REPOSITORY/22743http://dx.doi.org/10.2320/matertrans.M2009371
ISSN
1345-9678
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공과대학 > 화학공학부 > Articles
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