Effective Metal Work Function of Pt Gate Electrode in Ge Metal Oxide Semiconductor Device

Title
Effective Metal Work Function of Pt Gate Electrode in Ge Metal Oxide Semiconductor Device
Author(s)
S. V. Jagadeesh Chan[S. V. Jagadeesh Chan]정미라[정미라]심규환[심규환]홍효봉[홍효봉]이수형[이수형]안광순최철종[최철종]
Keywords
ATOMIC-LAYER DEPOSITION; HIGH-KAPPA; HFO2; SI; DIELECTRICS
Issue Date
201004
Publisher
ELECTROCHEMICAL SOC INC
Citation
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.157, no.5, pp.H546 - H550
Abstract
We fabricated Ge and Si metal oxide semiconductor devices with Pt/HfO(2) gate stacks and investigated their structural and electrical properties. Postmetallization annealing in O(2) ambient reduced the accumulation capacitance more significantly in Si devices than in Ge devices due to the increase in the thickness of a low-k interfacial layer in between the HfO(2) film and Si substrate. Ge devices exhibited lower effective work function values for a Pt gate electrode than Si devices owing to the presence of a large number of positively charged dipoles caused by a strong Fermi-level pinning at the Ge surface.
URI
http://hdl.handle.net/YU.REPOSITORY/22638http://dx.doi.org/10.1149/1.3332849
ISSN
0013-4651
Appears in Collections:
공과대학 > 화학공학부 > Articles
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