Enhanced Light Extraction of GaN-Based Light Emitting Diodes Fabricated with Deeply Etched Mesa Holes

Title
Enhanced Light Extraction of GaN-Based Light Emitting Diodes Fabricated with Deeply Etched Mesa Holes
Author(s)
김현수[김현수]안광순
Keywords
SURFACE; EFFICIENCY; SUBSTRATE; OUTPUT
Issue Date
201004
Publisher
ELECTROCHEMICAL SOC INC
Citation
ELECTROCHEMICAL AND SOLID STATE LETTERS, v.13, no.4, pp.H131 - H133
Abstract
We report on the enhanced light extraction of GaN-based light emitting diodes (LEDs) fabricated with deeply etched mesa holes. To maximize the extraction of trapped light, the geometry of mesa holes, which act as lateral exits in guided mode, could be optimized based on Snell's law. The LED fabricated with deeply etched mesa holes showed 27% enhancement in output power when compared to a reference LED. This result agreed with optical ray-tracing calculations. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3294967] All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/22596http://dx.doi.org/10.1149/1.3294967
ISSN
1099-0062
Appears in Collections:
공과대학 > 화학공학부 > Articles
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