Potassium-doped BaFe2As2 superconducting thin films with a transition temperature of 40 K

Title
Potassium-doped BaFe2As2 superconducting thin films with a transition temperature of 40 K
Author(s)
김동호강원남[강원남]이남훈[이남훈]정순길[정순길]
Keywords
COMPOUND
Issue Date
201005
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.96, no.20
Abstract
We report the growth of potassium-doped BaFe2As2 thin films, where the major charge carriers are holes, on Al2O3 (0001) and LaAlO3 (001) substrates by using an ex situ pulsed laser deposition technique. The measured superconducting transition temperatures are 40 K and 39 K for the films grown on Al2O3 and LaAlO3, respectively, and diamagnetism indicates that the films have good bulk superconducting properties below 36 K and 30 K, respectively. The x-ray diffraction patterns for both films indicated a preferred c-axis orientation, regardless of the substrate structures of LaAlO3 and Al2O3. The upper critical field at zero temperature was estimated to be about 155 T. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3431583]
URI
http://hdl.handle.net/YU.REPOSITORY/22503http://dx.doi.org/10.1063/1.3431583
ISSN
0003-6951
Appears in Collections:
이과대학 > 물리학과 > Articles
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