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dc.contributor.author류시옥ko
dc.contributor.author이두형[이두형]ko
dc.contributor.author한승열[한승열]ko
dc.contributor.authorC.-H. Chang[C.-H. Chang]ko
dc.date.accessioned2015-12-17T00:02:37Z-
dc.date.available2015-12-17T00:02:37Z-
dc.date.created2015-11-13-
dc.date.issued201005-
dc.identifier.citationELECTROCHEMICAL AND SOLID STATE LETTERS, v.13, no.8, pp.D61 - D64-
dc.identifier.issn1099-0062-
dc.identifier.urihttp://hdl.handle.net/YU.REPOSITORY/22499-
dc.identifier.urihttp://dx.doi.org/10.1149/1.3428742-
dc.description.abstractIn this article, we reported a spin successive ionic layer adsorption and reaction (SILAR) method for the first time. ZnS thin films were deposited by spin SILAR using ZnCl(2) and Na(2)S aqueous precursor solutions at room temperature and atmosphere pressure. The optical, structural, and morphological characterizations of the films were studied by scanning electron microscopy, atomic force microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, and UV/visible spectroscopy. Smooth (average roughness < 3 nm), uniform, and highly transparent ZnS (transmittance of over 90% in the visible band) thin films could be successfully deposited using this technique with shorter cycle time and much less solvent usage. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3428742] All rights reserved.-
dc.language영어-
dc.publisherELECTROCHEMICAL SOC INC-
dc.subjectATOMIC-FORCE MICROSCOPY-
dc.subjectEPITAXIAL-GROWTH-
dc.subjectSOLAR-CELLS-
dc.subject(100)GAAS-
dc.subjectSILICON-
dc.subjectSTRESS-
dc.titleZnS Thin Films Deposited by a Spin Successive Ionic Layer Adsorption and Reaction Process-
dc.typeArticle-
dc.identifier.wosid000278694500015-
dc.identifier.scopusid2-s2.0-77953554812-
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공과대학 > 화학공학부 > Articles
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