Effect of pentacene-dielectric affinity on pentacene thin film growth morphology in organic field-effect transistors

Title
Effect of pentacene-dielectric affinity on pentacene thin film growth morphology in organic field-effect transistors
Author(s)
김세현Jang, Mi[Jang, Mi]Yang, Hoichang[Yang, Hoichang]Park, Chan Eon[Park, Chan Eon]
Keywords
SELF-ASSEMBLED MONOLAYERS; GATE-DIELECTRICS; ELECTRONIC TRANSPORT; FUNCTIONAL-GROUPS; SURFACE-ENERGY; GRAIN-BOUNDARY; AMBIENT AIR; PERFORMANCE; TEMPERATURE; MOBILITY
Issue Date
201006
Publisher
ROYAL SOC CHEMISTRY
Citation
JOURNAL OF MATERIALS CHEMISTRY, v.20, no.27, pp.5612 - 5620
Abstract
Organic field-effect transistors (OFETs) are fabricated by depositing a thin film of semiconductor on the functionalized surface of a SiO(2) dielectric. The chemical and morphological structures of the interface between the semiconductor and the functionalized dielectric are critical for OFET performance. We have characterized the effect of the affinity between semiconductor and functionalized dielectric on the properties of the semiconductor-dielectric interface. The crystalline microstructure/nanostructure of the pentacene semiconductor layers, grown on a dielectric substrate that had been functionalized with either poly(4-vinyl pyridine) or polystyrene (to control hydrophobicity), and grown under a series of substrate temperatures and deposition rates, were characterized by X-ray diffraction, photoemission spectroscopy, and atomic force microscopy. By comparing the morphological features of the semiconductor thin films with the device characteristics (field-effect mobility, threshold voltage, and hysteresis) of the OFET devices, the effect of affinity-driven properties on charge modulation, charge trapping, and charge carrier transport could be described.
URI
http://hdl.handle.net/YU.REPOSITORY/22360http://dx.doi.org/10.1039/b921371f
ISSN
0959-9428
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공과대학 > 화학공학부 > Articles
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