Two-Dimensional Dopant Profiling in p+/n Junctions Using Scanning Electron Microscope Coupled with Selective Electrochemical Etching

Title
Two-Dimensional Dopant Profiling in p+/n Junctions Using Scanning Electron Microscope Coupled with Selective Electrochemical Etching
Author(s)
길연호[길연호]정명일[정명일]심규환[심규환]홍효봉[홍효봉]윤형중[윤형중]강승민[강승민]안광순최철종[최철종]
Keywords
DELINEATION; DEVICES
Issue Date
201006
Publisher
KOREAN INST METALS MATERIALS
Citation
ELECTRONIC MATERIALS LETTERS, v.6, no.2, pp.55 - 58
Abstract
Scanning Electron Microscopy (SEM) combined with selective electrochemical etching was used to assess two-dimensional (2-D) dopant profiles in p+/n junctions that formed by using BF(2) implantation followed by annealing. It was discovered that the electrochemically delineated junction depth (d(j)) increased with an increase in the BF(2) implantation energy. It was also found that, considering the mechanism of selective electrochemical etching, d(j) represents the junction edge that corresponded to the electrically-activated B atoms. The simulated 2-D dopant profiles of the experimental conditions were directly compared with the SEM results, and the implications of the discrepancies are discussed in this paper.
URI
http://hdl.handle.net/YU.REPOSITORY/22346http://dx.doi.org/10.3365/eml.2010.06.055
ISSN
1738-8090
Appears in Collections:
공과대학 > 화학공학부 > Articles
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