Optical Properties of Multi-Stacked InAs Quantum Dots Embedded in GaAs/InGaAs Strained Layer and its Annealing Behaviors

Title
Optical Properties of Multi-Stacked InAs Quantum Dots Embedded in GaAs/InGaAs Strained Layer and its Annealing Behaviors
Author(s)
김종수김도엽[김도엽]김군식[김군식]전수민[전수민]조민영[조민영]최현영[최현영]김민수[김민수]이동율[이동율]김진수[김진수]G. S. Eom[G. S. Eom]임재영[임재영]
Keywords
CHEMICAL-VAPOR-DEPOSITION; MOLECULAR-BEAM EPITAXY; GROWTH; LASERS; GAAS; ISLANDS
Issue Date
201006
Publisher
POLISH ACAD SCIENCES INST PHYSICS
Citation
ACTA PHYSICA POLONICA A, v.117, no.6, pp.941 - 944
Abstract
Multi-stacked InAs QDs embedded in ten periods of GaAs/In(0.1)Ga(0.9)As strained layers were grown by MBE and their optical properties were investigated by using PL spectroscopy. For the QDs embedded in ten periods of GaAs/In(0.1)Ga(0.9)As strained layers, the PL intensity is enhanced about 4.7 times and a narrower FWHM of 26 meV is observed compared to those of the conventional multi-stacked QDs. The PL spectra of the InAs QDs show blue-shifts of about 50 meV with increasing annealing temperature up to 850 degrees C. At annealing temperature of 600 degrees C, the FWHM of the PL peak is reduced to 16 meV and PL intensity is enhanced compared to those of the as-grown sample, which indicates improvement of size uniformity and crystal quality of the QDs.
URI
http://hdl.handle.net/YU.REPOSITORY/22339
ISSN
0587-4246
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이과대학 > 물리학과 > Articles
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