Effects of Growth Interruption of ZnO Buffer Layers on the Structural and the Optical Properties of ZnO Thin Films Grown by Using PA-MBE

Title
Effects of Growth Interruption of ZnO Buffer Layers on the Structural and the Optical Properties of ZnO Thin Films Grown by Using PA-MBE
Author(s)
김종수조민영[조민영]김민수[김민수]최현영[최현영]전수민[전수민]김군식[김군식]김도엽[김도엽]임광국[임광국]임재영[임재영]이동율[이동율]김진수[김진수]이주인[이주인]
Keywords
ZINC-OXIDE NANOPARTICLES; MOLECULAR-BEAM EPITAXY; QUANTUM DOTS; VAPOR-DEPOSITION; SUBSTRATE; NANOCRYSTALS; PHOTOLUMINESCENCE; NANOSTRUCTURES; MORPHOLOGY; ROUTE
Issue Date
201006
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.56, no.6, pp.1833 - 1837
Abstract
ZnO thin films with ZnO buffer layers were grown on Si substrates by using plasma-assisted molecular beam epitaxy (PA-MBE). The ZnO buffer layers were grown with the growth interruption technique. The structural and the optical properties of the ZnO thin films were investigated by using X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), and photoluminescence (PL). The surface morphology of the ZnO thin films was changed from an island to a net-like shape. An evident net-like shape was observed, and the optical properties were enhanced with increasing number of growth interruptions.
URI
http://hdl.handle.net/YU.REPOSITORY/22328http://dx.doi.org/10.3938/jkps.56.1833
ISSN
0374-4884
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이과대학 > 물리학과 > Articles
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