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dc.contributor.author박일규ko
dc.contributor.author박성주[박성주]ko
dc.date.accessioned2015-12-16T23:59:15Z-
dc.date.available2015-12-16T23:59:15Z-
dc.date.created2015-11-13-
dc.date.issued201006-
dc.identifier.citationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.56, no.6, pp.1828 - 1832-
dc.identifier.issn0374-4884-
dc.identifier.urihttp://hdl.handle.net/YU.REPOSITORY/22314-
dc.identifier.urihttp://dx.doi.org/10.3938/jkps.56.1828-
dc.description.abstractWe report on the growth of InGaN height-controlled quantum dots (HCQDs) and the fabrication of light-emitting diodes (LEDs). InGaN HCQDs were grown by alternately depositing In(0.43)Ga(0.57)N QDs and In(0.2)Ga(0.8)N spacer layers on a seed In(0.43)Ga(0.57)N QD layer by using a metal-organic chemical vapor deposition system. The photoluminescence (PL) and the electroluminescence (EL) emission peaks of the InGaN HCQDs were red-shifted with increasing number of depositions. This indicates that the height of the InGaN HCQDs can be controlled by the number of deposition cycles of the In(0.43)Ga(0.57)N/In(0.2)Ga(0.8)N layers because the thin In(0.2)Ga(0.8)N spacer layer allowed electrical coupling between the vertically-stacked QDs. As the input current increases, the EL emission peak of the InGaN HCQD LED was blue-shifted, and the width of the EL peak increased, indicating a negligible piezoelectric-field-induced quantum-confined Stark effect in the InGaN HCQDs.-
dc.language영어-
dc.publisherKOREAN PHYSICAL SOC-
dc.subjectGAAS-
dc.subjectGROWTH-
dc.subjectWELLS-
dc.titleHeight-controlled InGaN Quantum Dots and Light-emitting Diode Applications-
dc.typeArticle-
dc.identifier.wosid000278830500019-
dc.identifier.scopusid2-s2.0-77954850024-
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