Height-controlled InGaN Quantum Dots and Light-emitting Diode Applications

Title
Height-controlled InGaN Quantum Dots and Light-emitting Diode Applications
Author(s)
박일규박성주[박성주]
Keywords
GAAS; GROWTH; WELLS
Issue Date
201006
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.56, no.6, pp.1828 - 1832
Abstract
We report on the growth of InGaN height-controlled quantum dots (HCQDs) and the fabrication of light-emitting diodes (LEDs). InGaN HCQDs were grown by alternately depositing In(0.43)Ga(0.57)N QDs and In(0.2)Ga(0.8)N spacer layers on a seed In(0.43)Ga(0.57)N QD layer by using a metal-organic chemical vapor deposition system. The photoluminescence (PL) and the electroluminescence (EL) emission peaks of the InGaN HCQDs were red-shifted with increasing number of depositions. This indicates that the height of the InGaN HCQDs can be controlled by the number of deposition cycles of the In(0.43)Ga(0.57)N/In(0.2)Ga(0.8)N layers because the thin In(0.2)Ga(0.8)N spacer layer allowed electrical coupling between the vertically-stacked QDs. As the input current increases, the EL emission peak of the InGaN HCQD LED was blue-shifted, and the width of the EL peak increased, indicating a negligible piezoelectric-field-induced quantum-confined Stark effect in the InGaN HCQDs.
URI
http://hdl.handle.net/YU.REPOSITORY/22314http://dx.doi.org/10.3938/jkps.56.1828
ISSN
0374-4884
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공과대학 > 전자공학과 > Articles
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