양극산화 시간 및 전류밀도 변화에 따른 다공질 실리콘의 특성 변화

Title
양극산화 시간 및 전류밀도 변화에 따른 다공질 실리콘의 특성 변화
Other Titles
Effects of Current Density and Anodization Time on the Properties of Porous Si
Author(s)
김종수최현영[최현영]김민수[김민수]조민영[조민영]전수민[전수민]임광국[임광국]이동율[이동율]김진수[김진수]임재영[임재영]
Keywords
Porous Si; Anodization; Photoluminescence; Scanning electron microscopy; Porous Si; Anodization; Photoluminescence; Scanning electron microscopy
Issue Date
201006
Publisher
한국표면공학회
Citation
한국표면공학회지, v.43, no.3, pp.121 - 126
Abstract
The PS(porous Si) were fabricated with different anodization time and current density. The structural and optical properties of PS were investigated by SEM(scanning electron microscopy), AFM(atomic force microscopy), and PL(photoluminescence). It is found that the pore size and surface roughness of PS are proportional to the current density. The PL spectra show that the PL peak position is red-shifted with increasing anodization time. This behavior corresponds to the change of pore size which is consistent with the quantum confinement model. The FWHM(full width at half maximum) of PL peak is decreased from 97 to 51 nm and the PL peak position is blue-shifted with increasing current density up to 10 mA/cm2. The PL peak intensity of the PS fabricated under 1 mA/cm2 is the highest among samples.
URI
http://hdl.handle.net/YU.REPOSITORY/22287
ISSN
1225-8024
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이과대학 > 물리학과 > Articles
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