Growth of height-controlled InGaN quantum dots on GaN

Title
Growth of height-controlled InGaN quantum dots on GaN
Author(s)
박일규박승주[박승주]최철종[최철종]
Keywords
LUMINESCENCE; GAAS
Issue Date
201007
Publisher
ELSEVIER SCIENCE BV
Citation
JOURNAL OF CRYSTAL GROWTH, v.312, no.14, pp.2065 - 2068
Abstract
InGaN height-controlled quantum dots (HCQDs) were grown by alternately depositing In(0.4)Ga(0.6)N QD and In(0.1)Ga(0.9)N spacer layers on a seed In(0.4)Ga(0.6)N QD layer. Structural and optical studies showed that the height of the InGaN QDs was controlled by the deposition cycle of In(0.4)Ga(0.6)N/In(0.1)Ga(0.9)N layers. Photoluminescence studies showed that the In(0.4)Ga(0.6)N HCQDs provided deep potential wells and the piezoelectric field-induced quantum-confined Stark effect was negligibly small. These phenomena are attributed to variation in quantum confinement energy in the electronically coupled InGaN HCQDs providing deep potential wells. (C) 2010 Elsevier B.V. All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/22183http://dx.doi.org/10.1016/j.jcrysgro.2010.04.025
ISSN
0022-0248
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공과대학 > 전자공학과 > Articles
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