Browsing by Author V. Janardhanam[V. Janardhanam]

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Showing results 1 to 10 of 10

Issue DateTitleAuthor(s)
2012-01Annealing temperature dependency of the electrical and microstructural properties of Ti and Pt contacts to n-type Ge substratesV. Janardhanam[V. Janardhanam]; 김진성[김진성]; 문경원[문경원]; 안광순; 최철종[최철종]
2012-09Carrier transport mechanism of Se/n-type Si Schottky diodesV. Janardhanam[V. Janardhanam]; 박양규[박양규]; 안광순; 최철종[최철종]
2012-07Conduction Mechanism of Se Schottky Contact to n-Type GeV. Janardhanam[V. Janardhanam]; 박양규[박양규]; 윤형중[윤형중]; 안광순; 최철종[최철종]
2013-12Depinning of the Fermi level at the Ge Schottky interface through Se treatmentV. Janardhanam[V. Janardhanam]; Hyung-Joong Yun[Hyung-Joong Yun]; Jouhan Lee[Jouhan Lee]; V. Rajagopal Reddy[V. Rajagopal Reddy]; Hyobong Hong[Hyobong Hong]; 안광순; Chel-Jong Choi[Chel-Jong Choi]
2015-02Effect of copper phthalocyanine (CuPc) interlayer on the electrical characteristics of Au/n-GaN Schottky rectifier안광순; I. Jyothi[I. Jyothi]; V. Janardhanam[V. Janardhanam]; 임이랑[임이랑]; V. Rajagopal Reddy[V. Rajagopal Reddy]; 최철종[최철종]
2011-08Microstructural Evolution and Electrical Characteristics of Er-germanides Formed on Ge SubstrateV. Janardhanam[V. Janardhanam]; 문경원[문경원]; 김진성[김진성]; 이민수[이민수]; 안광순; 최철종[최철종]
2010-09Temperature dependency and carrier transport mechanisms of Ti/p-type InP Schottky rectifiersV. Janardhanam[V. Janardhanam]; 이훈기[이훈기]; 심규환[심규환]; 홍효봉[홍효봉]; 이수형[이수형]; 안광순; 최철종[최철종]
2012-05Temperature-dependent current-voltage characteristics and reverse leakage conduction mechanism of Pt/n-type Si0.85Ge0.15 schottky rectifiersV. Janardhanam[V. Janardhanam]; 최철종[최철종]; 이훈기[이훈기]; 길연호[길연호]; 심규환[심규환]; 안광순
2013-04Temperature-dependent current-voltage characteristics of Er-silicide Schottky contacts to strained Si-on-insulatorI. Jyothi[I. Jyothi]; 서민우[서민우]; V. Janardhanam[V. Janardhanam]; 심규환[심규환]; 이영부[이영부]; 안광순; 최철종[최철종]
2013-11Temperature-dependent current-voltage characteristics of Se Schottky contact to n-type GeV. Janardhanam[V. Janardhanam]; I. Jyothi[I. Jyothi]; 안광순; 최철종[최철종]